The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2001
Filed:
Apr. 17, 1998
Hiroyoshi Tanimoto, Tokyo, JP;
Toshiyuki Enda, Tokyo, JP;
Naoyuki Shigyo, Tokoy, JP;
Kazuya Matsuzawa, Tokyo, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A &Dgr;Z calculator calculates difference between an inversion layer capacitance by a classical theory and an inversion layer capacitance by a quantum theory, calculates &Dgr;Z which is a thickness of a semiconductor substrate equivalent to the difference in inversion layer capacitance. A discretization mesh generator generates a Delaunay discretization mesh for a structure of the semiconductor device to be evaluated. An electrical parameter calculator calculates electrical parameters of the semiconductor device under constraint that a charge density of channel conductivity type of the semiconductor device is set to zero at discretization mesh points of the discretization mesh on an interface between an insulating film and the semiconductor substrate and at discretization mesh points of the discretization mesh in the semiconductor substrate which are located within a distance less than the stored &Dgr;Z from the interface between the insulating film and the semiconductor substrate.