The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2001
Filed:
Apr. 24, 2000
Akira Haraguchi, Kasugai, JP;
Takashi Matsumoto, Tajimi, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
One end of a resistor R,is connected to a charger detection terminal OCV and the other end of the resistor R,is connected to a base terminal of an NPN type bipolar transistor Q,of open collector structure to thereby supply a driving bias current. An emitter terminal of the transistor Q,is connected to a reference potential and a collector terminal of the transistor Q,is connected to a gate terminal COUT of a charge control P type FET,. Not only the resistor R,but also a collector terminal of an NPN type bipolar transistor Q,of an open collector structure is connected to the base terminal of the transistor Q,. An emitter terminal of the transistor Q,is connected to the reference potential and an overcharge control signal from an overcharge control circuit,is connected to a base terminal of the transistor Q,. If a voltage of not less than a predetermined voltage value is applied to the charger detection terminal OCV, the transistor Q,is turned on and makes the charge control P type FET,conductive to thereby charge a battery. When receiving the overcharge control signal, the transistor Q,is turned on, bypasses a bias current of the transistor Q,supplied from the charger detection terminal OCV and turns off the transistor Q,to thereby prohibit charge operation.