The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2001
Filed:
Feb. 06, 1995
Applicant:
Inventor:
Satwinder Malhi, Garland, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/900 ; H01L 2/976 ; H01L 2/994 ;
U.S. Cl.
CPC ...
H01L 2/900 ; H01L 2/976 ; H01L 2/994 ;
Abstract
A vertical transistor comprises a semiconductor layer of a first conductivity type having a first doped region (,) formed therein. A second doped region (,) is formed within the first doped region (,). A gate overlies the first doped region such that a low impedance path between the second doped region and the semiconductor layer may be created responsive to a voltage applied to the gate. Isolation regions (,and,) are formed through the semiconductor layer to isolate the transistor from other devices.