The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2001
Filed:
Dec. 18, 1998
Sun-Hak Lee, Kyonggi-do, KR;
Samsung Electronics Co., Ltd., Kyungki-do, KR;
Abstract
There are provided a double-diffused MOS (Metal Oxide Semiconductor) transistor and a fabricating method thereof. In the double-diffused MOS transistor, a buried layer of a first conductive type and an epitaxial layer of the first conductive type are sequentially formed on a semiconductor substrate, and a gate electrode is formed on the epitaxial layer of the first conductive type with interposition of a gate insulating film. Source and drain regions of the first conductive type are formed in the surface of the epitaxial layer of the first conductive type in self-alignment and non-self-alignment with the gate electrode, respectively. A body region of a second conductive type is formed in the surface of the epitaxial layer of the first conductive type to be surrounded by the source region of the first conductive type, and a bulk bias region of the second conductive type is formed in the body region of the second conductive type under the source region of the first conductive type.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile