The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2001
Filed:
Jul. 30, 1998
Toshio Ohshima, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
This invention is characterized in that a load resistor is constituted of a tunneling junction element(,), and a single-electron tunneling junction element(,) and the tunneling junction element(,) for load resistor are laminated to design a phase-locked circuit compact. Further, the load resistor(,) is comprised of a plurality of laminated tunneling junctions for load resistor so that the load resistor can have the proper resistance. A DC bias voltage is applied to the electrode(,) of the tunneling junction element for load resistor, and an AC pump voltage to one electrode(,) of the single-electron tunneling junction element. In the case of a plurality of phase-locked circuit gates, one electrodes of the single-electron tunneling junction elements are designed into a common electrode to which the AC pump voltage is applied, and the other electrodes are formed apart from one another two-dimensionally. Then, the phase-locked circuit gates can be formed compact by laminating the tunneling junction elements for load resistor on the other electrodes. To achieve the above structure, the dielectric constant of the insulator layer of the tunneling junction element for load resistor is made larger than that of the insulator layer of the single-electron tunneling junction element.