The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2001
Filed:
Mar. 09, 1998
Francis J. Kub, Arnold, MD (US);
Victor Temple, Clifton Park, NY (US);
Karl Hobart, Upper Marlboro, MD (US);
John Neilson, Norristown, PA (US);
Intersil Corporation, Palm Bay, FL (US);
Abstract
A method for making at least one semiconductor power device with current conduction in a vertical direction from a plurality of semiconductor substrates includes processing at least one surface of each of two semiconductor substrates to form at least one of a metal layer and a doped region. The substrates are bonded together so that the at least one processed surface of each of the two semiconductor substrates define outer surfaces of the semiconductor device. The method further includes annealing the bonded together substrates at an anneal temperature so as to not adversely effect the processed surfaces. The method allows the making of a double sided semiconductor power device with a reduction in the number of sequential processing steps. The direct bonding approach allows current production recipes for fabricating single sided power devices to be used without requiring a separate process sequence.