The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2001
Filed:
Jul. 20, 1998
Applicant:
Inventor:
Yasuhisa Yamada, Tokyo, JP;
Assignee:
Nec Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 1/750 ; G06F 1/900 ; G21K 5/00 ;
U.S. Cl.
CPC ...
G06F 1/750 ; G06F 1/900 ; G21K 5/00 ;
Abstract
A method of extracting data of at least one aperture mask pattern from design data which includes write-required patterns and repeating units, so that boundary lines of the at least one aperture mask pattern are different from boundary lines of the repeating unit on the design data and so that the at least one aperture mask pattern completely includes at least one of the write-required patterns without partially or incompletely including the write-required pattern.
Yamada, Yasuhisa. (2001). Method of preparing a partial one-shot electron beam exposure mask and method of direct-writing patterns by use of a partial one-shot electron beam exposure mask (U.S. Patent No. 6192510). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6192510
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile