The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2001
Filed:
Dec. 23, 1999
James D. Huffman, Richardson, TX (US);
Rodney D. Miller, Kernersville, NC (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
An improved memory cell (,) for use in applications, such as micromirror arrays, in which little space is available and a slow read-back cycle is tolerated. The memory (,) comprises a first input/output node (,) connected to the input of a first inverter and to the output of a second inverter. The first inverter is comprised of two transistors (,) and drives a signal to a second input/output node (,). The input of the second inverter is connected to the second input/output node (,). When used to drive a typical micromirror cell, the address electrode of the micromirror cell are electrically connected to the first input/output node (,) and the second input/output node (,).