The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2001
Filed:
May. 20, 1997
Kunihiro Takahashi, Tokyo, JP;
Mizuaki Suzuki, Tokyo, JP;
Tsuneo Yamazaki, Tokyo, JP;
Hiroaki Takasu, Tokyo, JP;
Kunio Nakajima, Tokyo, JP;
Atsushi Sakurai, Tokyo, JP;
Tadao Iwaki, Tokyo, JP;
Yoshikazu Kojima, Tokyo, JP;
Masaaki Kamiya, Tokyo, JP;
Seiko Instruments Inc., , JP;
Abstract
To provide a semiconductor substrate and a light-valve semiconductor substrate capable of preventing the threshold value of a MOS transistor on a single-crystal silicon device forming layer from increasing and forming a MOS integrated circuit with a high reliability even for a long-time operation. A semiconductor substrate and a light-valve semiconductor substrate comprising a single-crystal silicon thin-film device forming layer,formed above an insulating substrate,through an adhesive layer,and an insulating layer,formed on the single-crystal silicon thin-film device forming layer, wherein a heat conductive layers,and,made of a material with a high heat conductivity are arranged between the single-crystal silicon thin-film device forming layer and the adhesive layer and on the insulating layer.