The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2001
Filed:
Feb. 19, 1998
Jiro Matsufusa, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
In order to correspond to high integration with large capacity of a semiconductor device, provided are a structure of the semiconductor device and a method for manufacturing the same in which a horizontal dimension can be reduced in either a memory cell region or a region where a peripheral circuit is to be formed or both the regions. A TFT is superposed on a trench capacitor with an insulation film provided therebetween in a DRAM memory cell region, and a TFT is superposed on a bulk transistor with an insulation film provided therebetween in a region where a peripheral circuit is to be formed. Consequently, elements are arranged three-dimensionally. Thus, a horizontal dimension of a region where each element is to be formed can be reduced.