The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2001
Filed:
Sep. 21, 1999
Masayuki Sonobe, Kyoto, JP;
Shunji Nakata, Kyoto, JP;
Tsuyoshi Tsutsui, Kyoto, JP;
Norikazu Itoh, Kyoto, JP;
Rohm Co., Ltd., Kyoto, JP;
Abstract
An n-type layer (,) and a p-type layer (,) which are made of a gallium nitride based compound semiconductor are provided on a substrate (,) so that a light emitting layer forming portion (,) for forming a light emitting layer is provided. A gallium nitride based compound semiconductor layer containing oxygen is used for at least one layer of the light emitting layer forming portion (,). In the case where a buffer layer (,) made of the gallium nitride based compound semiconductor or aluminum nitride is provided between the substrate (,) and the light emitting layer forming portion (,), the buffer layer (,) and/or at least one layer of the light emitting layer forming portion (,) may contain oxygen. By such a structure, crystal defects of the semiconductor layer of the light emitting layer forming portion (,) can be decreased and a luminance can highly be enhanced. Thus, it is possible to obtain a blue color type semiconductor light emitting device having a high luminance.