The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2001
Filed:
Aug. 28, 1998
Masataka Kase, Kawasaki, JP;
Yoshiyuki Niwa, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
In an ion implantation system, an ion beam generator generates and emits an ion beam containing ions of a target impurity element. A mass analyzing system derives desired ions from the ion beam to output an ion beam containing the desired ions. The ion beam emitted from the mass analyzing system becomes incident upon an inner cavity defined by a beam line. An electrostatic lens is being disposed in the inner cavity. The electrostatic lens converges the ion beam entered the inner cavity. The ion beam emitted from the beam line impinges upon a substrate into which impurities are to be implanted. A vacuum pump is being mounted on the beam line to evacuate the inner cavity of the beam line.