The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 20, 2001

Filed:

Sep. 09, 1999
Applicant:
Inventors:

Hsi-Mao Hsiao, Hsinchu, TW;

Chun-Lung Chen, Tainan Hsien, TW;

Shin-Fa Lin, Chang-Hua Hsien, TW;

Assignee:

Other;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/14763 ;
Abstract

A damascene process is described. An opening is formed in a dielectric layer. The opening is filled with a conductive plug. The conductive plug is etched back to substantially reduce the thickness of the conductive plug in the dielectric layer. A conformal top barrier layer is formed over the conductive plug.


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Hsiao, Hsi-Mao. (2001). Damascene process (U.S. Patent No. 6191029). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6191029

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