The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2001
Filed:
Jan. 12, 1999
Applicant:
Inventors:
Chih-Cherng Liao, Hsinchu, TW;
Jiunn-Liang Yu, Taipei, TW;
Chan-Jen Kuo, Tainan, TW;
Chi-San Wu, Taipei, TW;
Yun-Chi Jiang, Taichung, TW;
Assignee:
Vanguard International Semiconductor Corporation, Hsnincu, TW;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/13205 ;
U.S. Cl.
CPC ...
H01L 2/13205 ;
Abstract
A method for preventing void formation in a gate of a transistor formed in a substrate is disclosed. The method comprises: forming a gate oxide layer on the substrate; forming a polysilicon layer on the gate oxide layer; performing an ion implantation on the polysilicon layer, the ion implantation performed with a power approximately 30 KeV and a dosage about more than 10,atoms/cm,; and forming a silicide layer on the polysilicon layer.