The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2001
Filed:
Sep. 06, 1995
Applicant:
Inventors:
Yutaka Saitoh, Chiba, JP;
Jun Osanai, Chiba, JP;
Assignee:
Seiko Instruments Inc., , JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/176 ;
U.S. Cl.
CPC ...
H01L 2/176 ;
Abstract
A process for producing a semiconductor device comprises heat-treating an oxygen-containing silicon substrate in an inert atmosphere to change a concentration of oxygen contained in the silicon substrate to within a range of 5×10,/cm,to 10×10,/cm,, and heat treating the silicon substrate in an oxidative atmosphere to form a silicon oxide film.