The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2001
Filed:
Jan. 13, 1999
Houng-Chi Wei, I Lan Hsien, TW;
Mosel Vitelic Inc., Hsin-Chu, TW;
Abstract
The present invention provides a new method which increases the surface area of the storage node of the capacitor, the method comprising: (1) Forming a photo resistor layer with a circular hole on the surface of the semiconductor wafer; (2) Using a wet isotropic etching method to form a bowl-like shallow concavity (pit) through the hole with a radius bigger than the hole; (3) Using a dry anisotropic etching process to etch a shallow pit through the hole in the central part of the bottom of the shallow pit down through the substrate of the semiconductor wafer; and (4) Eliminating the photo resistor layer, and then depositing a doped polysilicon layer over the shallow pit and the well resulting in a recess corresponding to the shallow pit and the well, wherein the deposition layer with a recess forms the storage node of a capacitor, the storage node having a recess with a larger surface area.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile