The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2001
Filed:
Jun. 22, 1999
Akihisa Matsuda, Tsuchiura, JP;
Yoshimi Watabe, Kunitachi, JP;
Hideo Yamagishi, Kyotanabe, JP;
Masataka Kondo, Kobe, JP;
Takashi Hayakawa, Soraku-gun, JP;
Other;
Abstract
A substrate is disposed in a reactor kept to be a vacuum state, a material gas is supplied into a space in front of the substrate, high-frequency electric power is supplied to the material gas to generate plasma based on electric discharge excitation in the front space of the substrate, and an amorphous silicon thin film is deposited on the substrate by chemical vapour deposition. Further, an electrode section comprising tubular electrodes supplying the material gas through a plurality of gas discharge openings, and tubular electrode sucking and evacuating gases to the outside through a plurality of gas suction openings. Thereby, a higher silane gas and the like generated during the film deposition can be removed from a reactive region immediately, and a thin film is deposited on the substrate surface with the same condition of the film deposition at any spot of the substrate surface. Consequently, the amorphous silicon thin film with film quality may be deposited on the large-area substrate.