The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2001
Filed:
Mar. 28, 1996
Hiroyuki Hiraiwa, Yokohama, JP;
Nikon Corporation, Tokyo, JP;
Abstract
A method for producing a silica glass for photolithography, which comprises the following steps: jetting a starting material gas, an oxygen gas and a hydrogen gas from a burner and depositing and consolidating silica glass powder on a target to form an ingot having a growing direction, where the ingot is grown in such a manner that at least a part of glass synthesis face on the ingot having the silica glass powder deposited and consolidated is a plane substantially perpendicular to the growing direction of the ingot, thereby to obtain the ingot having a portion in which striae are substantially perpendicular to the growing direction of the ingot; and cutting out of the ingot the portion in which the striae are substantially perpendicular to the growing direction of the ingot, thereby to obtain a silica glass having striae which are substantially parallel to each other and are planar.