The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2001
Filed:
Dec. 12, 1997
Applicant:
Inventors:
Kwo-Jen Liu, San Jose, CA (US);
Chuck Cheng-Wing Cheng, Saratoga, CA (US);
Assignee:
Scenix Semiconduction, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 1/716 ;
U.S. Cl.
CPC ...
H03K 1/716 ;
Abstract
A high voltage NMOS switch is adjustable in order to optimize the switch for proper operation with different circuit configurations. A high voltage booster, included within the high voltage NMOS switch, enables the switch to reclaim the previously unused second half-cycle of a power source waveform signal, which thereby increases the speed of the NMOS switch by a factor of two. In addition, the high voltage NMOS switch provides added ramp rate flexibility by enabling a user to optimize the ramp rate of the high voltage NMOS switch for different circuit configurations.