The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2001
Filed:
May. 23, 1996
Motoji Yagura, Tenri, JP;
Hiroya Sato, Nara, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
An ohmic electrode structure includes an n-In,Ga,As layer where 0<x≦1; a Pt or Pd layer provided on the n-In,Ga,As layer; and at least one metal layer provided on the Pt or Pd layer. A semiconductor device includes a substrate; a first semiconductor layer having a p-type conductivity provided on the substrate; a second semiconductor layer having an n-type conductivity provided on the substrate; an ohmic contact layer provided on the first semiconductor layer; a barrier layer provided on the second semiconductor layer; a first electrode provided on the ohmic contact layer; and a second electrode provided on the barrier layer. The ohmic contact layer and the barrier layer are each formed of a material selected from the group consisting of Pt and Pd.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile