The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2001
Filed:
Feb. 04, 1998
Applicant:
Inventors:
Chihiro Ogawa, Tokyo, JP;
Yasuaki Hokari, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 3/10232 ; H01L 2/976 ; H01L 2/348 ; H01L 2/352 ; H01L 2/940 ;
U.S. Cl.
CPC ...
H01L 3/10232 ; H01L 2/976 ; H01L 2/348 ; H01L 2/352 ; H01L 2/940 ;
Abstract
A semiconductor device is disclosed that has a barrier metal layer between a silicon electrode and a metal electrode. For providing contacts on a charge transfer electrode made up of polysilicon, between the electrode and a shield film, which is a conductive film, without causing changes in channel potential or threshold voltage or influencing the charge transfer rate, a barrier metal layer composed of a metal silicide is provided between the shield film and the charge transfer electrode.