The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2001
Filed:
Jan. 14, 1998
Janet Wang, San Francisco, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
Reduction in the short channel effect of a Flash EPROM cell is described. A method includes forming a gate structure on a substrate structure, and performing a nitrogen implant. Further included is performing device doping, wherein the nitrogen implant inhibits diffusion of dopant material into a channel of the cell. A Flash EPROM cell with reduced short channel effect includes a gate region, a drain region, and a source region, the source region and drain region defining a channel region therebetween beneath the gate region. The source region and drain region further have nitrogen implanted therein to reduce lateral diffusion of dopant material into the channel region.