Fabrication of gated electron-emitting devices utilizing distributed particles to define gate openings, typically in combination with lift-off of excess emitter material

Abstract

An electron-emitting device is fabricated by a process in which particles (,) are distributed over an initial structure. The particles are utilized in defining primary openings (,, or,) that extend through a primary layer (,A,,A, or,) provided over a gate layer (,A,,A, or,B) formed over an insulating layer (,) and in defining corresponding gate openings (,, or,) that extend through the gate layer. The insulating layer is etched through the primary and gate openings to form corresponding dielectric openings (,or,) through the insulating layer down to a lower non-insulating region (,). Electron-emissive elements (,A or,A) are formed over the lower non-insulating region so that each electron-emissive element is at least partially situated in one dielectric opening. Formation of the electron-emissive elements, typically in the shape of cones, normally entails depositing emitter material over the primary layer, through the primary and gate openings, and into the dielectric openings and then removing the primary layer so as to remove any emitter material accumulated over the primary layer.