The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2001
Filed:
Sep. 01, 1998
Applicant:
Inventor:
Henry H. Hung, Phoenix, AZ (US);
Assignee:
Other;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02B 6/13 ;
U.S. Cl.
CPC ...
G02B 6/13 ;
Abstract
A process for greatly improving the DC drift problem associated with LiNbO,and LiTaO,substrates. The process immerses the substrates in a heat bath comprised of a strong acid and then subjects the substrates to cyclical annealing.
Quick Actions:
Hung, Henry. (2001). Process for making high yield, dc stable proton exchanged waveguide for active integrated optic devices (U.S. Patent No. 6185355). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6185355
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