The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2001
Filed:
Apr. 14, 1999
Masato Sakao, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A miniaturized contact in a semiconductor substrate is provided. The contact comprises a diffused layer formed at a surface of the substrate, an interlayer film for covering the diffused layer, a plurality of lower interconnections buried within the interlayer film, an upper interconnection disposed on the interlayer film and a contact hole passing through the interlayer film for connecting the diffused layer with the upper interconnection. The contact hole has an aperture diameter equivalent to a space interval between the lower interconnections. The contact further comprises a first buried conductor disposed only from the bottom of the contact hole to a height lower than that of the lower interconnections, a side-wall insulator disposed on a side-wall of the contact hole above the first buried conductor, and a second buried conductor disposed on the first buried conductor within the contact hole.