The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2001
Filed:
Jan. 28, 1999
Applicant:
Inventors:
Pavel Poplevine, Foster City, CA (US);
Alexander Kalnitsky, San Francisco, CA (US);
Hengyang (James) Lin, San Jose, CA (US);
Albert Bergemont, Palo Alto, CA (US);
Assignee:
National Semiconductor Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/362 ;
U.S. Cl.
CPC ...
H01L 2/362 ;
Abstract
The n-channel and p-channel driver transistors of an I/O circuit are electrostatic discharge (ESD) protected by utilizing a pair of well structures that resistively delay an ESD event from reaching the driver transistors, and that form diodes that direct the ESD event to the supply rail or ground of the circuit.