The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2001
Filed:
Dec. 09, 1998
Applicant:
Inventors:
Assignee:
U.S. Philips Corporation, New York, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 4/926 ; H01J 3/7317 ;
U.S. Cl.
CPC ...
H01J 4/926 ; H01J 3/7317 ;
Abstract
An ion implantation process comprises performing mass separation of ions from an ionised source of phosphorus so as to select the P,ions and reject phosphorus hydride ion species. The P,ions are injected into a semiconductor substrate. The rejection of phosphorus hydride ions species is facilitated because there are no such species adjacent (in terms of effective mass) the P,ion species. The use of the P,ion species also improves the implantation process for shallow implantation depths.