The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2001
Filed:
Jul. 24, 1998
Applicant:
Inventor:
Orie Tsuzuki, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1331 ;
U.S. Cl.
CPC ...
H01L 2/1331 ;
Abstract
A method of forming a semiconductor device, wherein, a silicon oxide film formed on a P-type silicon substrate is patterned, after which element separating trenches with a wider aperture width and a buried layer drawing trench with a narrower aperture width are formed at the same time. The buried layer drawing trench is filled with a conductive film such as a tungsten film, which also forms concave parts at the element separating trenches. The semiconductor is exposed at the bottom parts of the element separating trenches to be etched and form complete element separating trenches penetrating through the buried layer.