The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2001
Filed:
Dec. 15, 1998
Applicant:
Inventors:
Darius Crenshaw, Allen, TX (US);
Scott Summerfelt, Cupertino, CA (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/18234 ; H01L 2/18244 ;
U.S. Cl.
CPC ...
H01L 2/18234 ; H01L 2/18244 ;
Abstract
The capacitor (,) comprises a HDC dielectric (,) and upper (,) and lower (,) electrodes. The lower electrode comprises a polysilicon base (,), a diffusion barrier (,) on the sidewalls of the polysilicon base (,) and an oxygen stable material (,) on the sidewalls adjacent the diffusion barrier (,) and separated from the polysilicon base (,) sidewalls by the diffusion barrier (,). The oxygen stable material (,) is formed on the sidewalls by a deposition and either etchback or CMP process rather than by a patterned etch. The HDC dielectric (,) is then formed adjacent the oxygen stable material (,).