The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2001
Filed:
Feb. 26, 1999
Applicant:
Inventors:
Assignee:
Hyundai Electronics Industries Co., Ltd., Ichon-shi, KR;
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/100 ;
U.S. Cl.
CPC ...
H01L 2/100 ;
Abstract
A CMOS image sensor according to the present invention has a low-voltage photodiode which is fully depleted at a bias of 1.2-4.5V. The photodiode comprises: a P-epi layer; a field oxide layer dividing the P-epi layer into a field region and an active region; a N,region formed within the P-epi layer, wherein the first impurity region is apart from the isolation layer; and a P,region of the conductive type formed beneath a surface of the P-epi layer and on the N,region, wherein a width of the P,region is wider than that of the N,region so that a portion of the P,region is formed on the P-epi layer, whereby the P,region has the same potential as the P-epi layer.