The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2001
Filed:
Mar. 08, 1999
Shigeki Sakai, Tsukuba, JP;
Shinji Migita, Tsukuba, JP;
Abstract
A crystal growth method for thin films of oxides wherein a vapor-phase deposition method is used to grow crystals for Bi,Sr,Ca,Cu,O,oxide thin film,, where n is an integer equal to 1 or greater, includes a first step of growing a Bi,Sr,CuO,oxide thin film,to an arbitrary number of molecular layers by setting a growth environment to conditions in which oxides of bismuth alone are not formed, but intended multi-element oxide is formed, and supplying the growth environment with an excess of bismuth compared with other elements, thereby preventing deficiency of bismuth and also evaporating excess bismuth from the thin film, a second step of causing a layer,containing calcium atoms and copper atoms each in the amount of n/2 of the number of strontium atoms contained in the Bi,Sr,CuO,oxide thin film to accumulate upon the Bi,Sr,CuO,oxide thin film, and a third step of, in a state in which environmental temperature is set higher than the environmental temperature in the first step, causing the Bi,Sr,CuO,oxide thin film,and the accumulated calcium atoms and copper,atoms to react to grow crystals for a thin film,of an oxide Bi,Sr,Ca,Cu,O,, where n is an integer equal to 1 or greater.