The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2001
Filed:
May. 05, 1997
Applicant:
Inventors:
Michiko Takei, Kanagawa, JP;
Tatsuya Ohori, Tokyo, JP;
Hongyong Zhang, Kanagawa-Ken, JP;
Satomi Nagasawa, Kanagawa-Ken, JP;
Assignee:
Semiconductor Energy Laboratory Co., Ltd., Kanagawa, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02F 1/1343 ; G02F 1/1333 ;
U.S. Cl.
CPC ...
G02F 1/1343 ; G02F 1/1333 ;
Abstract
A number of parallel light-interrupting stripes are formed over the entire TFT substrate, and light-interrupting patterns that are isolated from each other are formed separately from the light-interrupting stripes. Light interruption along gate bus patterns is effected by the light-interrupting stripes, while light interruption along data bus patterns is effected by elongating branches from the gate bus patterns. Light interruption between the tip of each branch and a polysilicon drain is effected by the isolated light-interrupting pattern.