The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2001
Filed:
Dec. 14, 1998
Baoson Nguyen, Plano, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
An integrated circuit (,) made with a CMOS P-epi process includes a bandgap circuit (,). A pair of PNP bipolar junction transistors (,) have respective currents flowing through them with a ratio of 8 to 1. A differential stage has a further pair of PNP bipolar junction transistors (,) which are identical, and which have their emitters coupled to each other and to a power source (,). Each transistor of the further pair has a base coupled to the emitter of a respective transistor of the first pair. The output of the differential stage controls a current source (,), which causes a current to flow through multiple resistors (,) and through a diode (,). One of the resistors (,) has its ends coupled to the respective bases of the transistors of the first pair.