The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2001
Filed:
Jun. 11, 1999
Applicant:
Inventor:
Kanta Saino, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/358 ;
U.S. Cl.
CPC ...
H01L 2/358 ;
Abstract
A trench is formed among a plurality of elements which are formed on a semiconductor substrate. A CVD oxide is formed in the trench so as to electronically isolate the plurality of elements. A portion of the CVD oxide smoothly protrudes from a surface area of the semiconductor substrate and forms a step. The step is an alignment mark. The step is much shallower in depth than the trench. The step includes a sidewall having inclination which is gentler than inclination of a sidewall of the trench.