The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 30, 2001

Filed:

Jul. 19, 1999
Applicant:
Inventors:

Hidehiko Sasaki, Moriyama, JP;

Makoto Inai, Omihachiman, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1302 ;
U.S. Cl.
CPC ...
H01L 2/1302 ;
Abstract

A method for forming a resist pattern includes the steps of: forming a dummy pattern on a semiconductor substrate using one type of a photosensitive resist; applying a resist mask on the semiconductor substrate so as to bury the dummy pattern using an opposite type of a photosensitive resist; forming a mixing layer at the interface between the dummy pattern and the resist mask by applying a heat treatment; and dissolving and removing the dummy pattern with an etchant in which the mixing layer and the resist mask are indissoluble so as to form an opening having a space width smaller than a width of the dummy pattern in the resist mask.


Find Patent Forward Citations

Sasaki, Hidehiko. (2001). Method for forming a minute resist pattern and method for forming a gate electrode (U.S. Patent No. 6180528). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6180528

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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