The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2001
Filed:
Oct. 13, 1998
Chwan-Ying Lee, Tainan, TW;
Tzuen-Hsi Huang, Tou Liu, TW;
Industrial Technology Research Institute, Hsin-Chu, TW;
Abstract
The invention provides three embodiments for forming Cu/Au contacts and interconnects using electroless deposition. The three embodiments have different adhesion and barrier layers for the electroless Cu or Au plugs. The invention discloses a technique of utilizing electroless deposition in USLI circuits. This metalization process is an additive and selective to provide conducting layers as well as an interconnection between layers of a multilevel conductive metal semiconductor device. The first embodiment uses adhesion layers formed of Ni, Al, polysilicon or PdSi,; and a barrier layer composed of Ni—B, Ni, Pd, or Co and has first and second metal plugs formed by selective Cu or Au electroless processes. The second embodiment forms adhesion layers of PdSi,. The third embodiment forms adhesion layers of activated Ti or Al. Cu or Au plugs are selectively electroless deposited to form interconnects.