The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2001
Filed:
Apr. 03, 1998
Applicant:
Inventors:
Syd R. Wilson, Phoenix, AZ (US);
Charles E. Weitzel, Mesa, AZ (US);
Mohit Bhatnagar, Chandler, AZ (US);
Karen E. Moore, Phoenix, AZ (US);
Thomas A. Wetteroth, Chandler, AZ (US);
Assignee:
Motorola, Inc., Schaumburg, IL (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/130 ;
U.S. Cl.
CPC ...
H01L 2/130 ;
Abstract
A silicon carbide transistor (,) is formed from a silicon carbide film (,) that is formed on a silicon carbide substrate bulk (,). A conductor pattern layer (,) is formed on the silicon carbide film (,) and the silicon carbide film (,) removed from the silicon carbide substrate bulk (,) and attached to a substrate (,) of a dissimilar semiconductor material.