The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2001
Filed:
Apr. 19, 1999
Industrial Technology Research Institute, Hsin-Chu, TW;
Abstract
A process for fabricating a bipolar junction transistor, (BJT), featuring reduced junction capacitance, resulting from the decreased dimensions of extrinsic, and intrinsic base, regions, has been developed. The BJT device, is comprised with only a single polysilicon level, used for the emitter structure, while an extrinsic base, and intrinsic base region, are accommodated in an epitaxial silicon layer, grown on an underlying silicon, active device region, and grown on a silicon seed layer, which in turn overlays insulator isolation regions. A boron doped, intrinsic base region can be formed in an undoped version of the epitaxial silicon layer, or the boron doped, intrinsic base region can be contained in the as deposited, epitaxial silicon layer, or contained in an as deposited, epitaxial, silicon-germanium layer.