The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2001
Filed:
Sep. 04, 1998
Jae-Woo Roh, Seoul, KR;
Daewoo Electronics Co., Ltd., Seoul, KR;
Abstract
A method for patterning a thin film layer into a predetermined configuration improves resolution thereof by exposing a partial depth “d” of a photoresist layer to a light beam. The patterning method includes the steps of: (a) preparing a semiconductor substrate with the thin film layer, an intermediate layer and a photoresist layer formed thereon, successively; (b) exposing a partial depth of the photoresist layer to a light beam; (c) removing the portion of the photoresist layer exposed to the light beam by using a solution to thereby obtain a patterned photoresist layer; (d) etching the intermediate layer by using the patterned photoresist layer as a mask; and (e) patterning the thin film layer into the predetermined configuration by using the etched intermediate layer as a mask.