The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2001
Filed:
Sep. 09, 1998
Applicant:
Inventors:
Masayoshi Tarutani, Hyogo, JP;
Tsuyoshi Horikawa, Hyogo, JP;
Takaaki Kawahara, Hyogo, JP;
Mikio Yamamuka, Hyogo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 1/600 ;
U.S. Cl.
CPC ...
C23C 1/600 ;
Abstract
A CVD apparatus for forming a thin film having a high dielectric constant, which is improved to suppress source precipitation and residue generation and to achieve stable formation of a BST thin film, is provided. The apparatus includes a reaction chamber, a source gas supply tube, and a reactive gas supply tube. A jet element for jetting out the gas along the inner walls of the reaction chamber is provided to at least one of the source gas supply tube and the reactive gas supply tube.