Pass-through semiconductor wafer processing tool and process for gas treating a moving semiconductor wafer

Abstract

A pass-through, wafer-processing tool for treating a moving semiconductor wafer with a process gas. The tool comprises an open-ended, non-isolated processing module having a wafer path through the module, vacuum manifolds mounted adjacent the wafer entry to and wafer exit from the module, and a gas manifold between the vacuum manifolds adapted to direct process gas onto the moving wafer. The gas manifold may deliver plasma ions generated by a remote plasma unit outside the module. Instead, a plasma may be generated inside the pass-through, wafer processing tool and, if so, the tool further comprises a top electrode mounted above the wafer passage. A wafer handler, which may be a robotic handler, carries the wafer through the wafer passage and serves as a bottom electrode. The gas manifold delivers reactive gas between the moving wafer and the top electrode while an RF source connected to the top electrode delivers sufficient RF energy to generate a plasma from the reactive gas between the top electrode and the wafer. One or more pass-through, wafer-processing tools may be part of an integrated system of semiconductor wafer processing tools. Processes for treating semiconductor wafers with process gas using the above apparatus are also disclosed.