The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2001
Filed:
Aug. 03, 1998
Applicant:
Inventors:
Koichi Naniwae, Tokyo, JP;
Hiroshi Iwata, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/922 ; H01L 3/300 ; H01S 5/00 ;
U.S. Cl.
CPC ...
H01L 2/922 ; H01L 3/300 ; H01S 5/00 ;
Abstract
A semiconductor light emitting device has a stacked structure including an n-type clad layer, an active layer, and a p-type clad layer on an InP substrate. The p-type clad layer is made from an MgZnSeTe-based compound semiconductor lattice-matched with InP. The n-type clad layer is made from a compound semiconductor lattice-matched with InP and selected from an MgZnSeTe-based compound semiconductor, an MgZnCdSe-based compound semiconductor, and an MgCdSSe-based compound semiconductor.