The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 23, 2001

Filed:

May. 03, 1999
Applicant:
Inventors:

Swaminathan Srinivasan, Tucson, AZ (US);

Rushikesh M. Patel, Tucson, AZ (US);

Assignee:

Opto Power Corporation, Tucson, AZ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/024 ; H01S 5/026 ;
U.S. Cl.
CPC ...
H01S 5/024 ; H01S 5/026 ;
Abstract

Multi-layer, semiconductor devices are configured to reduce stress by the removal of much of the structure which does not actually contribute to device performance. In one embodiment, trough between mesas which define light emitting facets in a laser diode bar are etched well into the substrate to remove all layers of different compositions there. In another embodiment, troughs are also etched in the backside of the substrate of a laser diode structure where the troughs are aligned along axes perpendicular to the axes of the mesas. The removal of stress permits more accurate alignment of the multiple facets along a single axis when the laser bar is bonded to a heat sink. The accurate alignment minimizes the placement constraints on the position of a microlens for achieving maximum power output and coupling efficiency for optical fibers coupled to the microlens.


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