The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2001
Filed:
Dec. 10, 1997
Yasushi Miyasaka, Nagano, JP;
Fuji Electric Co., Ltd., , JP;
Abstract
A Schottky barrier diode is provided which has a substrate including a first-conductivity-type low concentration layer and a first-conductivity-type high concentration layer, and a guard ring region, comprising a second-conductivity-type diffusion layer having an impurity surface concentration of not greater than 5×10,/cm,, formed in the first-conductivity-type low concentration layer. The first-conductivity-type low concentration layer has a thickness large enough to prevent a depletion layer that appears in the low concentration layer upon application of the maximum reverse voltage from reaching the first-conductivity-type high concentration layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile