The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2001
Filed:
Apr. 27, 1998
Kazuaki Nishikata, Yokosuka, JP;
Koji Hiraiwa, Yokohama, JP;
The Furukawa Electric Co., Ltd., Tokyo, JP;
Abstract
A semiconductor waveguide type photo detector capable of preventing leak current from occurring and excellent in dark current characteristics, and a manufacturing method thereof are provided. In a semiconductor waveguide type photo detector, a layered structure is formed on a semiconductor substrate, the layered structure formed by building a first semiconductor layer, a second semiconductor layer and a third semiconductor layer in due order, the first semiconductor layer being of one of p type and n type, the second semiconductor layer having lower band gap energy than that of the first semiconductor layer, the third semiconductor layer having higher band gap energy than that of the second semiconductor layer and having a conductive type opposite to that of the first semiconductor layer, and wherein at least the second semiconductor layer of the layered structure has a semiconductor waveguide having a mesa stripe structure, and at least a side surface and/or a light incidence end face of the second semiconductor layer is curved.