The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2001
Filed:
Feb. 16, 1999
Applicant:
Inventor:
Michael Lee, Ta-Li, TW;
Assignee:
United Integrated Circuits Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/7108 ; H01L 2/976 ; H01L 3/1119 ;
U.S. Cl.
CPC ...
H01L 2/7108 ; H01L 2/976 ; H01L 3/1119 ;
Abstract
A DRAM capacitor. A first dielectric layer is formed over a substrate having a gate and source/drain regions, and a plug penetrating through the first dielectric layer to couple with the source/drain regions. A bottom electrode comprising a vertical pole, a metal plate, a first spacer and a second spacer is formed and contacts with the plug. A second dielectric layer is formed on the bottom electrode, and then a conductive layer is formed on the second dielectric layer.