The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2001
Filed:
Nov. 13, 1998
Sony Corporation, Tokyo, JP;
Abstract
A semiconductor light emitting device having good characteristics, high reliability and long lifetime includes a p-n junction or p-i-n junction made by locating an active layer in a position inside an n-type doped layer or p-type doped layer sufficiently distant from the depletion layer between the p-type doped layer and the n-type doped layer. When a component of intensity of light from the active layer normal to the active layer is P(x), x for its maximum value P,is x=0, and the range of x satisfying P(x)>P,/e,is −L,<x<L,in a semiconductor light emitting device having a p-n junction, doping concentration of at least a portion of the n-type doped layer where x>−L,is made lower than doping concentration of the other portion of the n-type doped layer, or doping concentration of at least a part of the p-type doped layer where x<L,is made lower than doping concentration of the other part of the p-type doped layer.