The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2001
Filed:
Feb. 16, 1999
Applicant:
Inventors:
Olaf Schönfeld, Regensburg, DE;
Ernst Nirschl, Wenzenbach, DE;
Assignee:
Siemens Aktiengesellschaft, Munich, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1316 ;
U.S. Cl.
CPC ...
H01L 2/1316 ;
Abstract
A method for producing at least one semiconductor body by metal organic vapor phase epitaxy (MOVPE). The semiconductor body is formed of a layer sequence with an active zone applied to a semiconductor wafer. By dry etching, the layer sequence is provided with at least one mesa trench whose depth is at least great enough that the active zone of the layer sequence is severed. Next, the composite including the semiconductor wafer and the layer sequence is severed in such a way that the at least one semiconductor body is created with at least one mesa edge.