The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2001
Filed:
Jun. 15, 1999
Se-Hyeong Lee, Kyonggi-do, KR;
Abstract
A cylindrical storage capacitor for a memory cell is disclosed. The cylindrical storage capacitor has a first polysilicon layer for a storage electrode in contact with conductive plug, the first polysilicon layer being a cylindrical structure, and having a hemispherical grain silicon (HGS) grown only at inner and top surfaces of the first polycrystalline silicon layer. The HGS widens the effective surface area of the storage electrode, to thereby secure a target capacitance and prevent adjacent storage capacitors from being micro-bridged. Moreover, the cylindrical first polysilicon pattern layer of which the outer peripheral surface have a fine vertical profile can be obtained by applying the nitride film as an etch stopper when forming the opening part in a selected portion of the first insulating layer.