The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2001
Filed:
Aug. 24, 1999
Jurriaan Schmitz, Eindhoven, NL;
Pierre H. Woerlee, Eindhoven, NL;
Andreas H. Montree, Eindhoven, NL;
U.S. Philips Corporation, New York, NY (US);
Abstract
In the known replacement gate process, the relatively high-ohmic poly gate is replaced by a low-ohmic metal gate by depositing a thick oxide layer and subsequently planarizing this layer by CMP until the gate is reached, which gate can be selectively removed and replaced by a metal gate. The process is simplified considerably by providing the gate structure as a stack of a dummy poly gate (,) and a nitride layer (,) on top of the poly gate. When, during the CMP, the nitride layer is reached, the CMP is stopped, thereby precluding an attack on the poly. The nitride and the poly are selectively removed relative to the oxide layer (,).